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K4T1G164QQ-HCE6 SAMSUNG - IC: DRAM memory | 1GbDRAM; 64Mx16bit; 1.8V; 333MHz; FBGA84; parallel | TME - Electronic components (WFS)
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K4T1G164QQ-HCE6 SAMSUNG - IC: DRAM memory | 1GbDRAM; 64Mx16bit; 1.8V; 333MHz; FBGA84; parallel | TME - Electronic components (WFS)
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K4T1G164QQ-HCE6 SAMSUNG - IC: DRAM memory | 1GbDRAM; 64Mx16bit; 1.8V; 333MHz; FBGA84; parallel | TME - Electronic components (WFS)
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